Samsung Demonstrates 256 Gb 3 nm MBCFET Chip at ISSCC 2021

Samsung Demonstrates 256 Gb 3 nm MBCFET Chip at ISSCC 2021

Throughout the IEEE International Reliable-State Circuits Conference (ISSCC), Samsung Foundry has presented a new phase in the direction of lesser and more successful nodes. The new chip that was introduced is a 256 Gb memory chip, based on SRAM engineering. Nonetheless, all of that doesn’t seem attention-grabbing, right up until we point out the technology that is guiding it. Samsung has for the first time manufactured a chip applying the firm’s gate-all-around industry-impact transistor (GAAFET) technology on the 3 nm semiconductor node. Formally, there are two varieties of GAAFET engineering: the normal GAAFET that utilizes nanowires as fins of the transistor, and MBCFET (multi-bridge channel FET) that works by using thicker fins that come in a variety of a nanosheet.

Samsung has shown the initial SRAM chip that takes advantage of MBCFET technology these days. The chip in dilemma is a 256 Gb chip with an space of 56 mm². The achievement Samsung is happy of is that the chip works by using 230 mV less electricity for writes, when compared to the conventional technique, as the MBCFET transistors make it possible for the corporation to have several distinct power-saving tactics. The new 3 nm MBCFET method is predicted to get into high-volume manufacturing sometime in 2022, nonetheless, we are however to see demos of logic chips in addition to SRAM like we see these days. Even so, even the demonstration of SRAM is large progress, and we are eager to see what the corporation manages to construct with the new technology.

Add Comment

Your email address will not be published. Required fields are marked *